• DocumentCode
    905563
  • Title

    Electric conduction in float-zone silicon after prolonged gamma irradiation

  • Author

    KAO, K.W. ; Pal, N.

  • Author_Institution
    University of Manitoba, Department of Electrical Engineering, Winnipeg, Canada
  • Volume
    4
  • Issue
    25
  • fYear
    1968
  • Firstpage
    571
  • Lastpage
    572
  • Abstract
    The electric conductivities of float-zone silicon doped with arsenic for ntype and with boron for ptype have been measured before and after gamma irradiation using a four-point probe. Some new phenomena after prolonged irradiation are reported, and a brief discussion is given.
  • Keywords
    electrical conductivity of solids; elemental semiconductors; gamma-ray effects; radiation effects; semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680442
  • Filename
    4233569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=905563