Small signal nonquasistatic models for GaAs field effect transistors for implementation in SPICE. II. Metal semiconductor field effect transistors (MESFETs)

Author

Lin, H.-K. ; Abdel-Motaleb, I.M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

Volume

138

Issue

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

749

Lastpage

755

Abstract

For pt.I see ibid., vol.138, no.6, p.735-48 (1991). A nonquasistatic model for GaAs metal semiconductor field effect transistors (MESFETs) is developed. The active distributed transmission line analogy is used to obtain frequency dependent Y-parameter relationships. Implementing the Y-parameters using R, L and C elements, a SPICE-like small signal equivalent circuit is built. This model can be used for the parasitic MESFETs of modulation doped field effect transistors (MODFETs) as well as regular MESFET structures

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; equivalent circuits; gallium arsenide; semiconductor device models; GaAs; MESFET; SPICE; Y-parameters; active distributed transmission line; field effect transistors; nonquasistatic model; small signal equivalent circuit;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

105371

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=905755