DocumentCode
905796
Title
Single injection, double injection and negative resistance in gold-doped high-resistivity silicon
Author
Wright, G.T. ; Ibrahim, A.F.
Author_Institution
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Volume
4
Issue
26
fYear
1968
Firstpage
597
Lastpage
598
Abstract
A simplified explanation is given for negative resistance in a semiconductor containing deep-lying donor and acceptor levels. A simple equation is derived for the breakover voltage and is verified by experimental studies of single and double-injection currents in gold-doped silicon.
Keywords
electrical conductivity of solids; elemental semiconductors; semiconductor materials;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19680465
Filename
4233593
Link To Document