• DocumentCode
    905952
  • Title

    High-voltage power transistors at high-level injection

  • Author

    Jantsch, O.

  • Volume
    57
  • Issue
    6
  • fYear
    1969
  • fDate
    6/1/1969 12:00:00 AM
  • Firstpage
    1226
  • Lastpage
    1227
  • Abstract
    The characteristics of power transistors calculated in an earlier paper are also applicable to n-p-i-n structures.
  • Keywords
    Australia; Charge carrier processes; Electron mobility; Germanium; Impact ionization; Lattices; Phonons; Power transistors; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7214
  • Filename
    1449144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=905952