Title :
Non-quasi-static model for MOSFET based on carrier-transit delay
Author :
Nakayama, N. ; Navarro, D. ; Tanaka, M. ; Ueno, H. ; Miura-Mattausch, M. ; Mattausch, H.J. ; Ohguro, T. ; Kumashiro, S. ; Taguchi, M. ; Kage, T. ; Miyamoto, S.
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
A non-quasi-static MOSFET model for circuit simulation, which is based on the carrier-transit delay responsible for the channel formation during switching on, has been developed. The developed model was implemented into a circuit simulator, and good agreement of transient drain current with 2D simulation results was confirmed.
Keywords :
MOSFET; carrier density; carrier mobility; circuit simulation; digital simulation; semiconductor device models; switching; MOSFET; Nonquasistatic model; carrier-transit delay; channel formation; circuit simulation; switching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040054
