DocumentCode :
906781
Title :
High-precision MOS current mirror
Author :
Akiya, M. ; Nakashima, S.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Atsugi Electrical Communication Laboratories, Atsugi, Japan
Volume :
131
Issue :
5
fYear :
1984
fDate :
10/1/1984 12:00:00 AM
Firstpage :
170
Lastpage :
175
Abstract :
Matching accuracies of current mirrors using SIMOX technology are discussed. The variation in matching errors has been both qualitatively and quantitatively analysed for MOS current mirrors. Matching errors at low operating currents are dominated by variations in threshold voltage and are inversely proportional to the drain current. In high-current operations, however, they are not dependent on drain current and are dominated by variations in channel length and width. Using 10 ¿m-channel-length devices, matching error less than 0.6% with 100 ¿A drain current is obtained without any compensation circuits. MOS current mirrors have been found to present greater advantages for low-current operation, such as higher matching accuracy and a smaller pattern area than similar bipolar current mirrors.
Keywords :
field effect integrated circuits; reference circuits; MOS current mirror; SIMOX technology; high-current operations; low-current operation; matching errors; monolithic IC; reference circuits;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1984.0043
Filename :
4643798
Link To Document :
بازگشت