High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Author

Dey, Anil W. ; Borg, B. Mattias ; Ganjipour, Bahram ; Ek, Martin ; Dick, K.A. ; Lind, Erik ; Thelander, C. ; Wernersson, Lars-Erik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

211

Lastpage

213

Abstract

We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high on-current levels. We report a maximum drive current of 310 μA/μm at VDS = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at VDS = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.

Keywords

III-V semiconductors; field effect transistors; gallium compounds; indium compounds; GaSb-InAsSb; axial heterojunction; heterostructure broken band alignment; high-current nanowire tunnel field-effect transistors; interband tunneling; nanowire circumference; on-current levels; scaled gate oxide display transconductances; voltage 0.5 V; voltage 300 mV; Doping; Heterojunctions; Logic gates; Nanoscale devices; Transistors; Tunneling; Broken gap; GaSb; III–V; InAs; tunnel field-effect transistors (TFETs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2234078

Filename

6410332