Title :
Operation of a single-phase CCD on GaAs at 560 MHz
Author :
Hayes, A.J. ; Davies, J.T. ; Eccleston, W.
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
fDate :
2/1/1985 12:00:00 AM
Abstract :
A 32 bit, two/single phase CCD has been fabricated on GaAs using a simple four-stage fabrication process. Its operation is described at frequencies of up to 560 MHz. The charge transfer efficiency was estimated to be in excess of 0.998 per transfer below 100 MHz.
Keywords :
III-V semiconductors; Schottky-barrier diodes; charge-coupled devices; gallium arsenide; 560 MHz operation; GaAs; Schottky barrier device; charge transfer efficiency; four-stage fabrication process; single-phase CCD;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0008
