DocumentCode
907481
Title
Measurement standards for integrated circuit processing
Author
Bullis, W. Myrray ; Scace, Robert I.
Author_Institution
National Bureau of Standards, Washington, DC
Volume
57
Issue
9
fYear
1969
Firstpage
1639
Lastpage
1646
Abstract
Both yield and quality of silicon monolithic integrated circuits depend on adequate control at all stages of their manufacture. Such control depends on measurement at each step, beginning with the selection of the substrate wafer, process chemicals, and parts, through the fabrication, assembly, and packaging of the finished circuit. The American Society for Testing and Materials Committee F-1 has developed standards for tests which have been widely used in the exchange of materials at various interfaces in the electron device industry. Many of these can be readily adapted for in-process control as well as for materials and parts acceptance tests. These standards and the process by which they were developed are reviewed; the importance of both industrial participation and the technical support activities of the National Bureau of Standards in this development is indicated. The need for additional standards is emphasized.
Keywords
Chemical processes; Circuit testing; Integrated circuit manufacture; Integrated circuit measurements; Integrated circuit yield; Materials testing; Measurement standards; Monolithic integrated circuits; Silicon; Standards development;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7349
Filename
1449279
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