DocumentCode
907598
Title
Low-voltage BIMOS AM front-end amplifier
Author
Steyaert, M. ; Chang, Z.
Author_Institution
Lab. ESAT-MICAS, Catholic Univ. Leuven, Heverlee, Belgium
Volume
137
Issue
1
fYear
1990
fDate
2/1/1990 12:00:00 AM
Firstpage
57
Lastpage
60
Abstract
A BIMOS AM front-end amplifier mixer is discussed. The advantages of BIMOS technology in the realisation of front-end amplifiers is demonstrated. Because of the low-voltage power supply, bipolar transistors are required for the mixer structure. It is shown that for low-noise applications an MOS input structure results in a better performance. The stability problem of a bipolar and MOS input structure is also analysed. It is shown that the MOS input structure has a better stability performance
Keywords
BIMOS integrated circuits; amplitude modulation; linear integrated circuits; mixers (circuits); radio receivers; radiofrequency amplifiers; stability; AM front-end amplifier; BIMOS; MOS input structure; RF type; low-noise applications; low-voltage power supply; mixer structure; monolithic IC; portable radio-receiver; stability performance;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
217043
Link To Document