• DocumentCode
    907613
  • Title

    Degradation mechanism of m.o.s. structures and transistors under ionising radiation

  • Author

    Esteve, Daniel ; Buxo, J.

  • Author_Institution
    CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
  • Volume
    6
  • Issue
    7
  • fYear
    1970
  • Firstpage
    198
  • Lastpage
    200
  • Abstract
    The physical nature of the emission-current mechanism involved at each heterojunction when m.o.s. components are irradiated is discussed by the authors. They test the validity of this mechanism with an overall experiment, and analyse its practical consequences on the form of the ¿VG(VG) degradation curve.
  • Keywords
    metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; radiation effects; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700142
  • Filename
    4234632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907613