Interface states in the silicon/silicon-oxide system observed by thermally stimulated charge release

The experiment of thermally stimulated charge release has been used in the m.o.s. capacitor to study electron and hole states in the metal-oxide-silicon system. Broadly similar results have been obtained for `wet¿ and `dry¿ oxides on `mechanically¿ and `chemically¿ polished silicon surfaces. A representative spectrum is presented showing electron and hole interface states spread over most of the energy band gap.