DocumentCode
908071
Title
Amorphous silicon-germanium thin-film photodetector array
Author
Shen, D.S. ; Conde, J.P. ; Chu, V. ; Aljishi, S. ; Liu, Jeffrey Z. ; Wagner, Sigurd
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume
13
Issue
1
fYear
1992
Firstpage
5
Lastpage
7
Abstract
The authors report a photodetector array based on an amorphous silicon-germanium alloy thin film. The detector array is designed for detecting light pulses from (Ga,Al)As laser diodes. An experimental 2*2 detector array, addressed by a silicon shift register, works to a clock frequency of 25 MHz and shows good stability.<>
Keywords
Ge-Si alloys; amorphous semiconductors; photodetectors; semiconductor thin films; thin film devices; 25 MHz; GaAlAs laser radiation; amorphous SiGe alloy; clock frequency; photodetector array; thin film photodetectors; Amorphous materials; Germanium silicon alloys; Optical arrays; Optical design; Photodetectors; Semiconductor laser arrays; Semiconductor thin films; Sensor arrays; Silicon alloys; Silicon germanium;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.144933
Filename
144933
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