DocumentCode :
908259
Title :
MNOS load device
Author :
Lin, H.C. ; Varker, C.J.
Volume :
57
Issue :
10
fYear :
1969
Firstpage :
1793
Lastpage :
1795
Abstract :
Metal-nitride-oxide-semiconductor (MNOS) field-effect transistors can be changed from enhancement mode to depletion mode after the application of polarizing voltage. When such a polarized MNOS device is used as a load in a switching circuit, the supply voltage and the rise time are reduced.
Keywords :
Delay; Equations; FETs; MOSFETs; Nonvolatile memory; Polarization; Switching circuits; Threshold voltage; Transfer functions; Transient response;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7417
Filename :
1449347
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=908259
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