• DocumentCode
    908751
  • Title

    One-dimensional numerical simulation of complementary power Schottky structures

  • Author

    Rang, T.

  • Author_Institution
    University of Saarland, Faculty of Automatics, Saarbrÿcken, West Germany
  • Volume
    132
  • Issue
    6
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    A short review of the history and modelling of Schottky structures is given. A one-dimensional numerical model including tunnelling and avalanche breakdown effects for the Schottky structures is described. Simulation results on complementary power Schottky structures for the three different barrier heights (data for Cr, W, Al) are carried out for DC and transient response.
  • Keywords
    Schottky-barrier diodes; impact ionisation; semiconductor device models; transient response; tunnelling; Al; Cr; DC response; W; avalanche breakdown effects; barrier heights; complementary power Schottky structures; impact ionisation; one-dimensional numerical model; semiconductor diodes; simulation; transient response; tunnelling;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1985.0056
  • Filename
    4643995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=908751