Title :
The performance of high-voltage field relieved Schottky barrier diodes
Author :
Fisher, C.A. ; Shannon, J.M. ; Paxman, D.H. ; Slatter, J.A.G.
Author_Institution :
Philips, Research Laboratories, Redhill, UK
fDate :
12/1/1985 12:00:00 AM
Abstract :
A Schottky barrier diode with field relief p+-rings which modify the surface field in the device is described. The leakage reduction per unit area is a function of geometry and for the smallest ring spacing amounted to a factor of approximately 10. The data were fitted to a simple theory of the field reduction expected from the geometrical considerations. The limits of the technique are discussed.
Keywords :
Schottky-barrier diodes; leakage currents; Schottky barrier diodes; field relief p+-rings; geometry; high-voltage field; leakage reduction; surface field modification;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0057
