Title :
Low threshold current 1.3-μm GaInNAs VCSELs grown by MOVPE
Author :
Yue, A. ; Shen, K. ; Renfan Wang ; Jing Shi
Author_Institution :
Dept. of Phys., Wuhan Univ., China
fDate :
3/1/2004 12:00:00 AM
Abstract :
The structure of the conventional contact 1.3-μm GaInNAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) was optimized and low threshold current 1.3-μm GaInNAs VCSELs grown by metal-organic vapor-phase epitaxy were reported. The idea is to optimize the active region, the doping profiles, and the pairs of p-distributed Bragg reflectors, and the detuning between the emission wavelength and the photoluminescence gain peak wavelength. The continuous-wave 1.0-mA threshold current was achieved for the single-mode VCSEL. For the multiple-mode VCSELs, the below 2-mA threshold currents at 5/spl deg/C-85/spl deg/C , the 1.13-mA threshold current at 55/spl deg/C, and 1.52-mA threshold current at 85/spl deg/C are the best results for 1.3-μm GaInNAs VCSELs.
Keywords :
III-V semiconductors; MOCVD; doping profiles; gallium compounds; indium compounds; laser cavity resonators; laser frequency stability; laser modes; laser tuning; nitrogen compounds; photoluminescence; semiconductor growth; semiconductor junctions; semiconductor lasers; surface emitting lasers; 1.0 mA; 1.13 mA; 1.3 mum; 1.52 mA; 5 to 85 degC; GaInNAs; GaInNAs VCSELs; GaInNAs-GaAs; GaInNAs-GaAs vertical-cavity surface-emitting lasers; MOVPE; active region optimization; continuous-wave threshold current; conventional contact; detuning; doping profiles; emission wavelength; low threshold current; metal-organic vapor-phase epitaxy; multiple-mode VCSELs; p-distributed Bragg reflectors; photoluminescence gain peak wavelength; single-mode VCSEL; Epitaxial growth; Epitaxial layers; Fabrication; Nitrogen; Optical surface waves; Physics; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.823730
