DocumentCode
909031
Title
Comparison of GIDL in p/sup +/-poly PMOS and n/sup +/-poly PMOS devices
Author
Lindert, Nick ; Yoshida, Makoto ; Wann, Clement ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
17
Issue
6
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
285
Lastpage
287
Abstract
Gate-induced-drain-leakage (GIDL) in LDD p-MOSFETs has been studied. The emphasis of this paper is on the comparison of GIDL in p/sup +/-poly PMOS versus n/sup +/-poly PMOS devices. Measurements show that the GIDL is less severe in p/sup +/-poly devices. Clarification for modeling GIDL in devices with different drain structures is also provided.
Keywords
MOSFET; band structure; leakage currents; semiconductor device models; tunnelling; GIDL; LDD p-MOSFET; Si; drain structures; gate-induced drain leakage; lightly doped drain; modeling; n/sup +/-poly PMOS devices; p/sup +/-poly PMOS devices; polysilicon p-channel devices; Doping profiles; Electrons; Equations; MOS devices; Photonic band gap; Roentgenium; Semiconductor process modeling; Silicon; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.496459
Filename
496459
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