Title :
Isolation process dependence of channel mobility in thin-film SOI devices
Author :
Huang, Cheng-Liang ; Soleimani, Hamid ; Grula, Greg ; Arora, Narain D. ; Antoniadis, Dimitri
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
Degradation of NMOS and enhancement of PMOS I-V characteristics are found to be dependent on specific isolation processes in thin-film SOI devices. These variations are due to mobility decrease in NMOS and increase in PMOS, which can be attributed to the isolation-process-related compressive strain of the silicon film. Magnitudes of mobility variation as high as 40% are observed in the affected SOI devices.
Keywords :
CMOS integrated circuits; MOSFET; ULSI; carrier mobility; isolation technology; silicon-on-insulator; thin film transistors; LOCOS; MESA; NMOS I-V characteristics; PMOS I-V characteristics; Si; Si film; channel mobility; compressive strain; isolation process dependence; thin-film SOI devices; CMOS process; CMOS technology; Capacitive sensors; Implants; Isolation technology; MOS devices; Semiconductor films; Silicon on insulator technology; Thin film devices; Ultra large scale integration;
Journal_Title :
Electron Device Letters, IEEE
