Title :
Noise measurements of silicon planar microwave transistors in the frequency range 4--8 GHz
Author :
Kotyczka, W. ; Strutt, M.J.O.
Author_Institution :
Swiss Federal Institute of Technology, Department of Advanced Electrical Engineering, Zÿrich, Switzerland
Abstract :
The noise figure as a function of the reflection coefficient of the source and of the collector current has been measured. The four fundamental noise parameters in the frequency range 4--8 GHz have been determined.
Keywords :
bipolar transistors; microwave devices; noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700335
