Title :
Titanium dioxide as gate insulator for m.o.s. transistors
Author :
Wakefield, J. ; Gamble, Harold S.
Author_Institution :
Queen´s University of Belfast, Department of Electrical Engineering, Belfast, UK
Abstract :
Metal-oxide-semiconductor (m.o.s.) transistors using titanium dioxide as the gate insulator have been fabricated which are of n channel enhancement type. Owing to the high permittivity of titanium dioxide, the transistors have low threshold voltages and high transconductance.
Keywords :
dielectric properties of solids; insulating materials; metal-insulator-semiconductor devices; titanium compounds; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700352
