• DocumentCode
    909809
  • Title

    High-frequency MOST structures

  • Author

    Arandjelovic, V.

  • Volume
    58
  • Issue
    1
  • fYear
    1970
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    By doping the substrate of a MOST more heavily near the Si-SiO2interface than in the bulk of the semiconductor, an improvement in the transconductance can be achieved. Since the gate capacitance after the turn-on remains unchanged, an improvement in the cutoff frequency results. The numerical results demonstrating this effect are presented.
  • Keywords
    Frequency measurement; Frequency synthesizers; Hydrogen; Magnetic field measurement; Masers; Measurement standards; Measurement units; NASA; Phase measurement; Transient response;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7555
  • Filename
    1449485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=909809