• DocumentCode
    910111
  • Title

    Electron beam luminescence of SnO2

  • Author

    Kawasaki, B.S. ; Garside, B.K. ; Shewchun, J.

  • Volume
    58
  • Issue
    1
  • fYear
    1970
  • Firstpage
    179
  • Lastpage
    180
  • Abstract
    Electron beam experiments on SnO2show that it is an indirect transition semiconductor with an energy gap of approximately 2.6 eV. Spectral and output intensity curves are presented. These indicate a very broad wavelength emission and no gain in the material.
  • Keywords
    Conducting materials; Crystals; Current density; Electron beams; Laser excitation; Luminescence; Optical films; Optical materials; Optical pumping; Temperature;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7583
  • Filename
    1449513