DocumentCode
910111
Title
Electron beam luminescence of SnO2
Author
Kawasaki, B.S. ; Garside, B.K. ; Shewchun, J.
Volume
58
Issue
1
fYear
1970
Firstpage
179
Lastpage
180
Abstract
Electron beam experiments on SnO2 show that it is an indirect transition semiconductor with an energy gap of approximately 2.6 eV. Spectral and output intensity curves are presented. These indicate a very broad wavelength emission and no gain in the material.
Keywords
Conducting materials; Crystals; Current density; Electron beams; Laser excitation; Luminescence; Optical films; Optical materials; Optical pumping; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7583
Filename
1449513
Link To Document