Title :
Modelling the DC characteristics of VMOS power transistors for computer-aided design
Author :
Abuelm¿¿atti, M.T.
Author_Institution :
Gulf Polytechnic, Department of Electrical Engineering and Computer Science, Isa Town, Bahrain
fDate :
8/1/1986 12:00:00 AM
Abstract :
A mathematical formula is presented for the current-voltage characteristic of the VMOS power transistor. The two parameters of this model can be easily extracted from different regions in the device characteristics. By using this formula, the implementation of a new VMOS power transistor model into the source code of circuit-simulation programs, such as SPICE, is feasible.
Keywords :
circuit CAD; insulated gate field effect transistors; power transistors; semiconductor device models; DC characteristics; SPICE; VMOS power transistors; circuit-simulation programs; computer-aided design; current-voltage characteristic; electronic engineering computing;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1986.0030
