• DocumentCode
    910697
  • Title

    Theory of the thin-oxide m.n.o.s. memory transistor

  • Author

    Svensson, Christer ; Lundstr¿¿m, I.

  • Author_Institution
    Chalmers University of Technology, Research Laboratories of Electronics III, Gothenburg, Sweden
  • Volume
    6
  • Issue
    20
  • fYear
    1970
  • Firstpage
    645
  • Lastpage
    647
  • Abstract
    A general model for the transient behaviour of m.i.s. memory transistors is presented. The model is applied to a practical memory transistor which has an insulator layer consisting of 500¿1000 Å silicon nitride on 15¿25 Å silicon dioxide. The properties of this device are calculated and are shown to agree with experimental data.
  • Keywords
    metal-insulator-semiconductor devices; semiconductor device models; semiconductor storage devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700447
  • Filename
    4234950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=910697