Modeling of nonhyperbolic sine I-V characteristics in poly-Si resistors

Author

Rodder, Mark

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

13

Issue

2

fYear

1992

Firstpage

74

Lastpage

76

Abstract

Poly-Si resistors with an unimplanted channel region (and with n-type source/drain regions) can exhibit a nonhyperbolic sine (non-sinh) I-V characteristic at low V/sub DS/ and an activation energy which is not simply decreasing monotonically with increasing V/sub DS/. These phenomena are not explained by conventional poly-Si resistor models. To describe these characteristics, a self-consistent model which includes the effects of a reverse-biased diode at the drain end is presented. Numerical simulation results show excellent agreement with experiment in regard to the shape of the I-V characteristic and of the effective activation energy as a function of V/sub DS/.<>

Keywords

elemental semiconductors; resistors; semiconductor device models; silicon; activation energy; n-type drain-region; n-type source; nonhyperbolic sine I-V characteristics; poly-Si resistors; polycrystalline Si; polysilicon resistors; reverse-biased diode; self-consistent model; simulation; unimplanted channel region; Character generation; Diodes; Numerical simulation; Predictive models; Random access memory; Resistors; Semiconductor process modeling; Shape; Solid modeling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144963

Filename

144963