Waveguiding properties of nonsymmetrical five-layer LOC and DFB lasers

Author

Burkhard, H.

Author_Institution

Forschungsinstitut der Deutschen Bundespost beim Fernmeldetechnischen Zentralamt, Darmstadt, West Germany

Volume

134

Issue

1

fYear

1987

fDate

2/1/1987 12:00:00 AM

Firstpage

7

Abstract

The waveguiding properties of double heterostructure lasers with nonsymmetrical structure have been investigated. Either large optical cavity (LOC) lasers with separate carrier and optical confinement or distributed feedback (DFB) and distributed Bragg reflector lasers (DBR), respectively, can be investigated easily with the aid of our analytical expressions for the near-field distribution, the confinement factors and the DFB coupling coefficients. Formulas are given here for the first time in analytical form; in connection with analytical expressions for the bulk refractive indexes of the quaternary InGaAsP/InP system they have been used for the design of 2nd-order ¿¿ = 1.55 ¿¿m DFB lasers. Thus, threshold currents of 12 mA have been achieved experimentally.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser theory; optical waveguides; semiconductor junction lasers; 1.55 micron; 12 mA; DBR lasers; DFB coupling coefficients; DFB lasers; III-V semiconductor; analytical expressions; bulk refractive indexes; carrier confinement; confinement factors; design; distributed Bragg reflector lasers; double heterostructure lasers; large optical cavity lasers; near-field distribution; nonsymmetrical five layer LOC lasers; optical confinement; quaternary InGaAsP-InP system; threshold currents; waveguiding properties;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

DOI

10.1049/ip-j.1987.0003

Filename

4644282