Characteristics of the high-speed SI thyristor and its application to the 60-kHz 100-kW high-efficiency inverter

Author

Muraoka, Kimihiro ; Kawamura, Yutaka ; Ohtsubo, Yoshinobu ; Sugawara, Shogo ; Tamamushi, Takashige ; Nishizawa, Jun-ichi

Author_Institution

Toyo Electr. Manuf. Co. Ltd., Kanagawa, Japan

Volume

4

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

92

Lastpage

100

Abstract

The authors describe fabrication results for the 1200 V, 300 A class of the single-buried-gate, n-buffer free and anode-emitter-shorted, normally-on-type, medium-power, very low-loss, high-speed SI thyristor. This class of thyristors has a relatively thinner n-type high resistivity that is larger than that of the 2500 V 300 A class of SI thyristors. The characteristics of the fabricated device were investigated to obtain data for the improvement of the turn-off switching performance of the buried-gate SI thyristor for use as a power switch

Keywords

invertors; semiconductor switches; thyristor applications; thyristors; 100 kW; 1200 V; 300 A; 60 kHz; anode-emitter-shorted; buried gate thyristor; high speed thyristor; high-efficiency inverter; medium power thyristor; n-buffer free; power switch; static induction thyristor; turn-off switching performance; Anodes; Breakdown voltage; Electric variables measurement; Electrostatic induction; Electrostatic measurements; Fabrication; Helium; Inverters; P-i-n diodes; Thyristors;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.21876

Filename

21876