DocumentCode
911933
Title
Effects of Zn doping on modulation bandwidth of 1.55 mu m InGaAs/InGaAsP multiquantum well DFB lasers
Author
Lealman, I.F. ; Perrin, S.D.
Author_Institution
BT Labs., Ipswich, UK
Volume
29
Issue
13
fYear
1993
fDate
6/24/1993 12:00:00 AM
Firstpage
1197
Lastpage
1198
Abstract
Experimental results are presented that confirm that Zn doping the active region of multiquantum well DFB lasers enhances their modulation bandwidth. This is achieved by reducing both the damping and low frequency rolloff associated with carrier transport. A maximum CW bandwidth of 17 GHz at 20 degrees C is reported.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor doping; semiconductor lasers; zinc; 1.55 micron; 17 GHz; 20 degC; InGaAs-InGaAsP:Zn; InP substrate; Zn doping; active region; damping; low frequency rolloff; maximum CW bandwidth; modulation bandwidth; multiquantum well DFB lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930800
Filename
219231
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