Title :
Behaviour of a low-noise microwave f.e.t. at low temperature
Author :
Loriou, B. ; Bellec, M. ; Le Rouzic, M.
Author_Institution :
Centre National d´Ã\x89tudes des Télécommunications, Centre des Recherches, Lannion, France
Abstract :
The values of gain and noise figure at 1000 MHz were measured against temperature (from 300 to 77K) for a GaAs f.e.t., in common-source configuration. An important decrease in noise figure from 3.2 to 1.5 dB with a 2 dB increase in gain was observed.
Keywords :
field effect transistors; microwave devices; thermal effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700566
