DocumentCode :
912177
Title :
Circuit representation of avalanche region of IMPATT diodes for different carrier velocities and ionisation rates of electrons and holes
Author :
Hulin, R. ; Claassen, M. ; Harth, W.
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Volume :
6
Issue :
26
fYear :
1970
Firstpage :
849
Lastpage :
850
Abstract :
A parallel resonant circuit representing the small-signal behaviour of the avalanche region of IMPATT diodes is given. The components are calculated in a nonquasistatic manner for different ionisation rates and drift velocities of electrons and holes. With the results, the avalanche frequencies of Si, Ge and GaAs as functions of the avalanche zone width are compared.
Keywords :
IMPATT devices; equivalent circuits;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19700585
Filename :
4235094
Link To Document :
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