Title :
On the deeply depleted MOS capacitor
Author :
Prince, Jerry L. ; Wortman, J.J. ; Hauser, J.R.
fDate :
5/1/1970 12:00:00 AM
Abstract :
It is shown that the length of that portion of the depleted region of a deeply depleted MOS capacitor which is active in generating carriers can be found by considering the effect of carrier concentrations on generation rate.
Keywords :
Capacitance; Charge carrier lifetime; Charge carriers; Electrons; MOS capacitors; Neodymium; Radio access networks; Tin; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7779
