• DocumentCode
    912468
  • Title

    Versatile GaAs triangular barrier transistor structure grown by molecular beam epitaxy

  • Author

    Al-Bustani, A.A. ; Rees, P.K.

  • Author_Institution
    Lancashire Polytechnic, Faculty of Technology, School of Electrical and Electronic Engineering, Preston, UK
  • Volume
    134
  • Issue
    6
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    171
  • Lastpage
    173
  • Abstract
    An n-type GaAs triangular barrier transistor (TBT) has been grown by molecular beam epitaxy. Log Io against VCE and linear IC/VCE characteristics have been measured using voltage and current sources to apply the base bias. For a 100 ohm load resistor, the TBT has a power gain of 12.8. An outline theory explaining the results is presented.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; power transistors; GaAs; III-V semiconductors; bipolar power transistor; molecular beam epitaxy; n-type; triangular barrier transistor;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1987.0035
  • Filename
    4644386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912468