DocumentCode
912469
Title
Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs
Author
Selberherr, Siegfried ; Ringhofer, Christian A.
Author_Institution
Abteilung Physikalische Elektronik, Institut fuer Allgemeine Elektrotechnik und Elektronik, Wien, Austria
Volume
3
Issue
1
fYear
1984
fDate
1/1/1984 12:00:00 AM
Firstpage
52
Lastpage
64
Abstract
This paper gives guidelines for the development of computer programs for the numerical simulation of semiconductor devices. For this purpose, the basic mathematical results on the corresponding elliptic boundary value problem are reviewed. Particularly, existence, smoothness, and structure of the solutions of the fundamental semiconductor equations are discussed. Various feasible approaches to the numerical solution of the semiconductor equations are described. Much emphasis is placed on constructive remarks to help authors of device simulation programs make decisions on their code design problems. Thus criteria for an optimal mesh generation strategy are given. The iterative solution of the systems of nonlinear and linear equations obtained by discretizing the semiconductor equations is discussed. An example shows the power of these concepts combined with modern numerical methods in comparison to classical approaches.
Keywords
Boundary value problems; Charge carrier processes; Conductors; Guidelines; Laboratories; Mesh generation; Nonlinear equations; Numerical simulation; Semiconductor devices; Semiconductor process modeling;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1984.1270057
Filename
1270057
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