• DocumentCode
    912469
  • Title

    Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs

  • Author

    Selberherr, Siegfried ; Ringhofer, Christian A.

  • Author_Institution
    Abteilung Physikalische Elektronik, Institut fuer Allgemeine Elektrotechnik und Elektronik, Wien, Austria
  • Volume
    3
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    52
  • Lastpage
    64
  • Abstract
    This paper gives guidelines for the development of computer programs for the numerical simulation of semiconductor devices. For this purpose, the basic mathematical results on the corresponding elliptic boundary value problem are reviewed. Particularly, existence, smoothness, and structure of the solutions of the fundamental semiconductor equations are discussed. Various feasible approaches to the numerical solution of the semiconductor equations are described. Much emphasis is placed on constructive remarks to help authors of device simulation programs make decisions on their code design problems. Thus criteria for an optimal mesh generation strategy are given. The iterative solution of the systems of nonlinear and linear equations obtained by discretizing the semiconductor equations is discussed. An example shows the power of these concepts combined with modern numerical methods in comparison to classical approaches.
  • Keywords
    Boundary value problems; Charge carrier processes; Conductors; Guidelines; Laboratories; Mesh generation; Nonlinear equations; Numerical simulation; Semiconductor devices; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.1984.1270057
  • Filename
    1270057