Title :
F.m. noise measurements on silicon IMPATT oscillators
Author :
Clunie, D.M. ; Tearle, C.A. ; Court, W.P.N.
Author_Institution :
Services Electronics Research Laboratory, Baldock, UK
Abstract :
The view has often been expressed that IMPATT oscillators have poor f.m. noise performance. This letter gives results of f.m. noise measurements on J band IMPATT oscillators which indicate that, with suitable cavity and diode design, good f.m. noise performance can be obtained.
Keywords :
IMPATT devices; frequency modulation; microwave oscillators; noise measurement; FM noise measurement; IMPATT oscillators; J-band; Si; microwave oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710029
