DocumentCode
912846
Title
Thermally induced stress in GaAs/GaAlAs stripe laser diodes
Author
Rimpler, R. ; Both, W.
Author_Institution
Zentralinstitut f¿¿r Optik und Spektroskopie der ADW der DDR, Berlin, East Germany
Volume
134
Issue
6
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
323
Lastpage
325
Abstract
The paper presents an investigation of deformation in the active region of GaAs laser diodes under operating conditions. Since the properties of bulk material and manufactured diode are not identical, a study of the spectral splitting and polarisation changes caused by mechanical stress in the diode is made. These results are used to calibrate instruments for a study of the deformation due to thermal stress in the diode under operating conditions. This thermal stress can exceed the shear stress required for dislocation motion in the active region of the diode.
Keywords
III-V semiconductors; aluminium compounds; deformation; gallium arsenide; semiconductor junction lasers; thermal stresses; GaAs-GaAlAs stripe laser diodes; active region; bulk material; deformation; dislocation motion; instrument calibration; manufactured diode; mechanical stress; operating conditions; polarisation changes; semiconductors; shear stress; spectral splitting; thermally induced stress;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1987.0052
Filename
4644428
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