• DocumentCode
    912866
  • Title

    Power GaAs MESFET with a High Drain-Source Breakdown Voltage

  • Author

    Fukuta, Masumi ; Suyama, Katsuhiko ; Suzuki, Hidetake ; Nakayama, Yoshiro ; Ishikawa, Hajime

  • Volume
    24
  • Issue
    6
  • fYear
    1976
  • fDate
    6/1/1976 12:00:00 AM
  • Firstpage
    312
  • Lastpage
    317
  • Abstract
    A power GaAs MESFET with a high drain-source breakdown voltage in excess of 17 V has been developed. A selective GaAs epitaxial process is introduced to form "inlaid" n+ source and drain regions that can provide a high drain-source breakdown voltage and a low ohmic-contact resistance. Typical characteristics of the MESFET composed of two-cell units are as follows:
  • Keywords
    Bipolar transistors; Electric breakdown; FETs; Gain; Gallium arsenide; Helium; Linearity; Low voltage; MESFETs; Power generation;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1976.1128848
  • Filename
    1128848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912866