Title :
Quantification of the Memory Imprint Effect for a Charged Particle Environment
Author :
Bhuva, B.L. ; Johnson, R.L., Jr. ; Gyurcsik, R.S. ; Fernald, K.W. ; Kerns, S.E. ; Stapor, W.J. ; Campbell, A.B. ; Xapsos, M.A.
Author_Institution :
North Carolina State University Electrical and Computer Engineering Department Raleigh, North Carolina 27695 7911
Abstract :
The effects of total accumulated dose on the single-event vulnerability of NMOS resistive-load SRAM´s are investigated. The bias-dependent shifts in device parameters can imprint the memory state present during exposure or erase the imprinted state. Analysis of these effects is presented along with an analytic model developed for the quantification of these effects. The results indicate that the imprint effect is dominated by the difference in the threshold voltage of the n-channel devices.
Keywords :
CMOS logic circuits; Circuit testing; Ionizing radiation; Laboratories; Logic testing; MOS devices; Protons; Pulse measurements; Random access memory; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337490
