DocumentCode
912914
Title
Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton Beams
Author
Xapsos, M.A. ; Massenqill, L.W. ; Stapor, W.J. ; Shapiro, P. ; Campbell, A.B. ; Kerns, S.E. ; Fernald, K.W. ; Knudson, A.R.
Author_Institution
Naval Research Laboratory, Washington, DC 20375-5000
Volume
34
Issue
6
fYear
1987
Firstpage
1419
Lastpage
1425
Abstract
Pulsed proton beams can create various upset effects in memory circuits. The response of the IDT 6116RH static RAM to these effects has been investigated over a range of flux extending from a single-event dominated region to a dose-rate dominated region. A surprisingly large intermediate region has been observed for the first time in which nuclear reactions add to background ionization to produce synergistic upset effects. From the viewpoint of memory reliability, the threshold of this synergistic region appears to be more important than the dose-rate upset threshold. Comparisons to gamma/electron dose-rate and single-event upset measurements are presented, as well as analysis and modelling of the results.
Keywords
Circuits; Cyclotrons; Electrons; Laboratories; Particle beams; Particle scattering; Protons; Random access memory; Read-write memory; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337491
Filename
4337491
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