• DocumentCode
    912928
  • Title

    Effect of oxide-layer thickness on the speed of m.n.o.s. transistors

  • Author

    Oakley, R.E.

  • Author_Institution
    Plessey Co., Allen Clark Research Centre, Towcester, UK
  • Volume
    7
  • Issue
    4
  • fYear
    1971
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    The electrical characteristics of m.n.o.s. transistors are described. Conditions are proposed for the measurement of the speed, or rate of change of threshold voltage, so that different types may be compared Results are presented to show that the speed increases exponentially as the thickness of the oxide layer is reduced in the range 10¿25 Å.
  • Keywords
    metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; transistors; MNOS; oxide layer thickness; transistor threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710061
  • Filename
    4235168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912928