Title :
Edge Rate Induced Upset in High Speed Circuits
Author :
Bartholet, William G. ; Stubbs, Gene W. ; Ness, Joseph D.
Author_Institution :
Boeing Physical Sciences Research Center Boeing Aerospace Co. P.O. Box 3999 Seattle, WA 98124
Abstract :
A new transient radiation upset mechanism is reported in high speed (GaAs) microcircuits induced by a radiation pulse´s edge rate, or ¿ content. A proposed circuit mechanism is described and supportive test data presented. Hardness assurance implications, hardening issues, and potential scope of the new upset mechanism are all discussed.
Keywords :
Bandwidth; Circuit testing; Gallium arsenide; Inductance; Logic devices; Logic testing; Photoconductivity; Pulse circuits; Steady-state; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337494
