Performance of GaAs MESFET´s at Low Temperatures (Short Papers)

The noise- and s-parameters of a GaAs MESFET with 1-mu m gate Iength are characterized versus temperature. At room temperature, the noise figure measured at 12 GHz is 3.5 dB. At 90 K, the noise figure decreases to 0.8 dB (T_e = 60 K). The associated gain is 8 dB. The design of a cooled amplifier for the 11.7-12.2-GHz communication band is discussed. At 60 K, the three-stage amplifier exhibits 1.6-dB noise figure (T_e = 130 K) and 31-dB gain.