• DocumentCode
    913031
  • Title

    Influence of the preoxidation cleaning on the electrical properties of thin SIO2 layers

  • Author

    Prom, J.L. ; Castagne, J. ; Sarrabayrouse, G. ; Munoz-Yague, A.

  • Author_Institution
    Centre National de la Recherche Scientifique, Laboratoire d´´Automatique et d´´Analyse des Systÿmes, Toulouse, France
  • Volume
    135
  • Issue
    1
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    20
  • Lastpage
    22
  • Abstract
    The influence of a preoxidation cleaning procedure including an (HF + ethanol) step is investigated. It is shown that such a treatment gives a better thickness uniformity and improves the breakdown strength of silica layers.
  • Keywords
    electric breakdown of solids; electric strength; electronic conduction in insulating thin films; insulating thin films; semiconductor technology; silicon compounds; surface treatment; HF; breakdown strength; electrical properties; ethanol; preoxidation cleaning; semiconductor technology; silica layers; thickness uniformity; thin SiO2 layers;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1988.0005
  • Filename
    4644444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913031