• DocumentCode
    913052
  • Title

    General experimental method of parameter extraction for CMOS timing macromodels

  • Author

    Wu, C.-Y. ; Jang, W.-Y. ; Wu, H.-J.

  • Author_Institution
    National Chiao Tung University, Institute of Electronics, Hsinchu, Republic of China
  • Volume
    135
  • Issue
    2
  • fYear
    1988
  • fDate
    4/1/1988 12:00:00 AM
  • Firstpage
    39
  • Lastpage
    47
  • Abstract
    A new general experimental method for timing macromodel parameter extraction is proposed and investigated. Based on the general timing models developed and the measured timing data of CMOS inverters, the critical field exponent UEXP of carrier mobilities in transient operation, the optimal gate/source voltage and pn-junction voltage, and the capacitances associated with a logic gate are extracted by using the proposed method. It is shown that the extracted value of UEXP is twice the conventional value owing to the integration effect on the drain currents in delay calculations. The optimal linearisation gate/source voltage is about 0.7 VDD, whereas the pn-junction voltage is approximately VDD/2. By using the extracted timing parameters, the accuracy of the timing macromodels developed is improved and experimentally verified. The possibility of accuracy improvement and experimental verification makes the proposed method quite helpful in developing efficient timing macromodels for digital VLSI.
  • Keywords
    CMOS integrated circuits; VLSI; circuit CAD; digital integrated circuits; insulated gate field effect transistors; integrated circuit technology; invertors; logic gates; semiconductor device models; CMOS inverters; CMOS timing macromodels; accuracy improvement; capacitances; carrier mobilities in transient operation; critical field exponent; digital VLSI; experimental verification; extracted timing parameters; gate voltage; general experimental method; large signal equivalent circuits; logic gate; measured timing data; models; optimal linearisation; pn-junction voltage; timing macromodel parameter extraction; timing models;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1988.0008
  • Filename
    4644448