Title :
Output characteristic stabilisation of power MOSFETs
Author :
Abdala, M.A. ; Jones, B.K.
Author_Institution :
University of Lancaster, Department of Physics, Lancaster, UK
fDate :
8/1/1988 12:00:00 AM
Abstract :
The saturation current of a biased MOS transistor decreases as the temperature is raised. Thus self-heating results in a negative equilibrium output conductance and the possibility of instability in the circuit. Experiments are reported to show that this effect can be relieved over a wide range of bias conditions using a controlled substrate bias driven from an integrated MOS sensor.
Keywords :
compensation; field effect transistor circuits; insulated gate field effect transistors; power integrated circuits; power transistors; stability; DMOS type; bias conditions; biased MOS transistor; controlled substrate bias; integrated MOS sensor; monolithic IC; negative differential conductance compensation; negative equilibrium output conductance; output characteristic stabilisation; power MOSFETs; saturation current; self-heating; temperature compensation;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1988.0016
