DocumentCode
913147
Title
Output characteristic stabilisation of power MOSFETs
Author
Abdala, M.A. ; Jones, B.K.
Author_Institution
University of Lancaster, Department of Physics, Lancaster, UK
Volume
135
Issue
4
fYear
1988
fDate
8/1/1988 12:00:00 AM
Firstpage
91
Lastpage
93
Abstract
The saturation current of a biased MOS transistor decreases as the temperature is raised. Thus self-heating results in a negative equilibrium output conductance and the possibility of instability in the circuit. Experiments are reported to show that this effect can be relieved over a wide range of bias conditions using a controlled substrate bias driven from an integrated MOS sensor.
Keywords
compensation; field effect transistor circuits; insulated gate field effect transistors; power integrated circuits; power transistors; stability; DMOS type; bias conditions; biased MOS transistor; controlled substrate bias; integrated MOS sensor; monolithic IC; negative differential conductance compensation; negative equilibrium output conductance; output characteristic stabilisation; power MOSFETs; saturation current; self-heating; temperature compensation;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1988.0016
Filename
4644458
Link To Document