Breakdown voltage enhancement from channel quantization in InAl/As/n/sup +/-InGaAs HFET´s

Author

Bahl, Sandeep R. ; del Alamo, Jesus A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

13

Issue

2

fYear

1992

Firstpage

123

Lastpage

125

Abstract

In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As HFETs have been fabricated with different channel thicknesses. It is shown that by reducing the channel thickness from 350 to 100 AA, the reverse gate breakdown voltage improves from 9 to 19 V. This is partially attributed to the increased effective bandgap that results from energy quantization in the channel. This bandgap enhancement is directly confirmed by photoluminescence (PL) measurements on the same heterostructures. Channel quantization emerges as a promising approach for exploiting the excellent transport properties of InGaAs with high InAs mole fraction. The principle behind the work should be applicable to other narrow-gap semiconductors.<>

Keywords

III-V semiconductors; aluminium compounds; electric breakdown of solids; energy gap; gallium arsenide; high electron mobility transistors; indium compounds; HFETs; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; bandgap enhancement; breakdown voltage enhancement; channel quantization; channel thicknesses; effective bandgap; heterostructures; high InAs mole fraction; photoluminescence; reverse gate breakdown voltage; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Photoluminescence; Photonic band gap; Quantization; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144979

Filename

144979