DocumentCode
913201
Title
Hot electron device monitoring and characterisation: a review
Author
Sanchez, J.J. ; Hsueh, K. ; DeMassa, T.A.
Author_Institution
Intel Corporation, CTMG Division, Chandler, USA
Volume
135
Issue
5
fYear
1988
fDate
10/1/1988 12:00:00 AM
Firstpage
113
Lastpage
118
Abstract
Several measurement tools required for the accurate assessment of the damage inflicted by the various forms of hot electron phenomena are reviewed. Characterisation of both the type and level of hot electron activity is essential in determining both the rate of degradation as well as forecasting device lifetimes. These measurement tools are frequently employed to evaluate the hot electron resistant properties of new processes and device structures. They also aid the extraction of form factors for different reliability models. These models provide a simple and efficient method to estimate device lifetimes as well as monitor a given fabrication process. In addition, the various measurement techniques can be correlated with each other, allowing the derivation of several empirical models which aid in ascertaining both the type and level of hot electron activity. Once the various correlations have been established, choosing a given monitor allows evaluation of a variety of hot electron activities which is useful in a fabrication environment.
Keywords
hot carriers; life testing; monitoring; reliability; reviews; semiconductor device models; characterisation; device lifetime estimation; fabrication process monitor; hot electron device monitoring; hot electron phenomena; hot electron resistant properties; measurement techniques; reliability models; review;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1988.0020
Filename
4644463
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