• DocumentCode
    913201
  • Title

    Hot electron device monitoring and characterisation: a review

  • Author

    Sanchez, J.J. ; Hsueh, K. ; DeMassa, T.A.

  • Author_Institution
    Intel Corporation, CTMG Division, Chandler, USA
  • Volume
    135
  • Issue
    5
  • fYear
    1988
  • fDate
    10/1/1988 12:00:00 AM
  • Firstpage
    113
  • Lastpage
    118
  • Abstract
    Several measurement tools required for the accurate assessment of the damage inflicted by the various forms of hot electron phenomena are reviewed. Characterisation of both the type and level of hot electron activity is essential in determining both the rate of degradation as well as forecasting device lifetimes. These measurement tools are frequently employed to evaluate the hot electron resistant properties of new processes and device structures. They also aid the extraction of form factors for different reliability models. These models provide a simple and efficient method to estimate device lifetimes as well as monitor a given fabrication process. In addition, the various measurement techniques can be correlated with each other, allowing the derivation of several empirical models which aid in ascertaining both the type and level of hot electron activity. Once the various correlations have been established, choosing a given monitor allows evaluation of a variety of hot electron activities which is useful in a fabrication environment.
  • Keywords
    hot carriers; life testing; monitoring; reliability; reviews; semiconductor device models; characterisation; device lifetime estimation; fabrication process monitor; hot electron device monitoring; hot electron phenomena; hot electron resistant properties; measurement techniques; reliability models; review;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1988.0020
  • Filename
    4644463