SEM-EBIC studies of electron beam irradiation memory effects in a-Si: H

Hydrogenated amorphous silicon (a- Si: H) samples were exposed to an electron beam at various beam energies and doses, causing damage. The exposed image and spot patterns were studied using the SEM-EBIC technique. The dependence of EBIC image contrast on the exposing electron beam energy and dose and its annealing behaviour are studied. The contrast width of the exposed spot measured from the EBIC image is reported for different exposure doses and probe diameters, and is correlated to the spatial resolution in a-Si: H memory device.