• DocumentCode
    913445
  • Title

    Excess gate current in a junction-gate field-effect transistor

  • Author

    Dang Luong Mo

  • Volume
    58
  • Issue
    7
  • fYear
    1970
  • fDate
    7/1/1970 12:00:00 AM
  • Firstpage
    1166
  • Lastpage
    1168
  • Abstract
    Approximate potential distribution near the drain of the junction-gate field-effect transistor (JFET) is found and is used to deduce the excess reverse gate current, based on the assumption that such current is caused by an avalanche multiplication of carriers in the channel. Theory agrees well with measurement.
  • Keywords
    Charge carrier density; FETs; Impurities; Poisson equations; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7884
  • Filename
    1449814
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913445