• DocumentCode
    913554
  • Title

    Practical Integration of Process, Device, and Circuit Simulation

  • Author

    Sokel, Ralph J. ; Macmillen, Donald B.

  • Author_Institution
    INMOS Corporation, Colorado Springs, CO, USA
  • Volume
    4
  • Issue
    4
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    554
  • Lastpage
    560
  • Abstract
    Readily available process, device, and circuit simulation programs have been integrated into an effective system for enhancing semiconductor product development. In this paper, the system will be discussed with particular emphasis on the problems encountered in making simulation tools accessible to users. Each of the primary programs is reviewed, and the modifications and enhancements which have been made to adapt the programs to our requirements are discussed. The problem of interpolating impurity concentration profiles between process simulation grids and device simulation grids is discussed. The link between device simulation and circuit simulation is parameter extraction. The application of optimization techniques for parameter extraction is considered.
  • Keywords
    Bipolar transistor circuits; Circuit simulation; Computational modeling; Costs; Impurities; MOSFETs; Physics; Product development; Silicon devices; Springs;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.1985.1270157
  • Filename
    1270157