DocumentCode
913554
Title
Practical Integration of Process, Device, and Circuit Simulation
Author
Sokel, Ralph J. ; Macmillen, Donald B.
Author_Institution
INMOS Corporation, Colorado Springs, CO, USA
Volume
4
Issue
4
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
554
Lastpage
560
Abstract
Readily available process, device, and circuit simulation programs have been integrated into an effective system for enhancing semiconductor product development. In this paper, the system will be discussed with particular emphasis on the problems encountered in making simulation tools accessible to users. Each of the primary programs is reviewed, and the modifications and enhancements which have been made to adapt the programs to our requirements are discussed. The problem of interpolating impurity concentration profiles between process simulation grids and device simulation grids is discussed. The link between device simulation and circuit simulation is parameter extraction. The application of optimization techniques for parameter extraction is considered.
Keywords
Bipolar transistor circuits; Circuit simulation; Computational modeling; Costs; Impurities; MOSFETs; Physics; Product development; Silicon devices; Springs;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1985.1270157
Filename
1270157
Link To Document